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BUL903ED - Silicon NPN Power Transistor

Description

INTEGRATED ANTISATURATION AND PROTECTIONNETWORK INTEGRATED ANTIPARALLELCOLLECTOR EMITTER DIODE HIGH VOLTAGECAPABILITY LOW SPREADOF DYNAMIC PARAMETERS MINIMUMLOT-TO-LOT SPREAD FOR RELIABLEOPERATION VERYHIGH SWITCHING SPEED ARCING TEST SELFPROTECTED APPLICATIONS

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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BUL903ED DESCRIPTION ·INTEGRATED ANTISATURATION AND PROTECTIONNETWORK ·INTEGRATED ANTIPARALLELCOLLECTOR EMITTER DIODE ·HIGH VOLTAGECAPABILITY ·LOW SPREADOF DYNAMIC PARAMETERS ·MINIMUMLOT-TO-LOT SPREAD FOR RELIABLEOPERATION ·VERYHIGH SWITCHING SPEED ·ARCING TEST SELFPROTECTED APPLICATIONS ·LAMP ELECTRONIC BALLASTFOR FLUORESCENT LIGHTINGUSING 277V HALF BRIDGECURRENT-FED CONFIGURATION ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCES Collector-Emitter Voltage (VBE = 0) 900 VCEO Collector-Emitter Voltage(IB = 0) 400 VEBO Emitter-Base Voltage (IC = 0) 7 IC Collector Current-Continuous 5 ICM Collector Peak Current (tp <5 ms) 8 IB Base Current PC Collector Power Dissipation @ TC=25℃
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