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2STW4466 - High power NPN epitaxial planar bipolar transistor

Description

The device is a NPN transistor manufactured in low voltage planar technology using base island layout.

The resulting transistor shows good gain linearity coupled with low VCE(sat) behaviour.

Recommended for 40 W to 70 W high fidelity audio frequency amplifier output stage.

Features

  • High breakdown voltage VCEO = www. DataSheet4U. com.
  • Complementary to 2STW1693.
  • 80 V Typical ft = 20 MHz Fully characterized at 125 oC.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2STW4466 High power NPN epitaxial planar bipolar transistor Features ■ High breakdown voltage VCEO = www.DataSheet4U.com ■ Complementary to 2STW1693 ■ ■ 80 V Typical ft = 20 MHz Fully characterized at 125 oC Applications ■ 3 2 1 Audio power amplifier TO-247 Description The device is a NPN transistor manufactured in low voltage planar technology using base island layout. The resulting transistor shows good gain linearity coupled with low VCE(sat) behaviour. Recommended for 40 W to 70 W high fidelity audio frequency amplifier output stage. Figure 1. Internal schematic diagram Table 1. Device summary Marking 2STW4466 Package TO-247 Packaging Tube Order code 2STW4466 September 2008 Rev 2 1/9 www.st.com 9 Electrical ratings 2STW4466 1 Electrical ratings Table 2.
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