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2STW1693
High power PNP epitaxial planar bipolar transistor
Features
■ High breakdown voltage VCEO = -80 V ■ Complementary to 2STW4466 ■ Typical ft = 20 MHz ■ Fully characterized at 125 oC
Applications
■ Audio power amplifier
Description
The device is a PNP transistor manufactured in low voltage planar technology using base island layout. The resulting transistor shows good gain linearity coupled with low VCE(sat) behaviour. Recommended for 40W to 70W high fidelity audio frequency amplifier output stage.
3 2 1
TO-247
Figure 1. Internal schematic diagram
Table 1. Device summary Order code 2STW1693
Marking 2STW1693
Package TO-247
Packaging Tube
October 2008
Rev 2
1/9
www.st.com
9
Electrical ratings
1 Electrical ratings
Table 2.
2STW1693 Datasheet
