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2STW4468 - High Power NPN Epitaxial Planar Bipolar Transistor

Description

The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology.

The resulting transistor shows good gain linearity behaviour.

Recommended for 70W to 100W high fidelity audio frequency amplifier output stage.

Features

  • High breakdown voltage VCEO=140V Complementary to 2STW1695 Fast-switching speed Typical ft =20MHz Fully characterized at 125 oC In compliance with the 2002/93/EC European Directive TO-247 3 2 1.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com 2STW4468 High power NPN epitaxial planar bipolar transistor General features ■ ■ ■ ■ ■ ■ High breakdown voltage VCEO=140V Complementary to 2STW1695 Fast-switching speed Typical ft =20MHz Fully characterized at 125 oC In compliance with the 2002/93/EC European Directive TO-247 3 2 1 Applications ■ Audio power amplifier Description The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Recommended for 70W to 100W high fidelity audio frequency amplifier output stage. Internal schematic diagram Order codes Part Number 2STW4468 Marking 2STW4468 Package TO-247 Packing Tube February 2007 Rev 3 1/9 www.st.com 9 www.DataSheet4U.
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