2N2369A
DESCRIPTION
The 2N2369A is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case. It is designed specifically for high-speed saturated switching applications at current levels from 100 µA to 100 m A.
TO-18
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CB O V CE S V CE O V EB O IC I CM Pt ot Parameter Collector-base Voltage (I E = 0) Collector-emitter Voltage (V BE = 0) Collector-emitter Voltage (I B = 0) Emitter-base Voltage (I C = 0) Collector Current Collector Current (10 µs pulse) Total Power Dissipation at T amb ≤ 25 °C at T c ase ≤ 25 °C at T c ase ≤ 100 °C Storage and Junction Temperature Value 40 40 15 4.5 0.2 0.5 0.36 1.2 0.68
- 65 to 200 Unit V V V V A A W W W °C 1/6
T s t g, T j
November 1988
THERMAL DATA
R t h j -c ase R t h j-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 146 486 °C/W °C/W
ELECTRICAL CHARACTERISTICS (T amb = 25 °C unless otherwise specified)
Symbol I CBO I CES V (BR) CBO Parameter...
