2N2369A
Features
:
- NPN Silicon Planar Epitaxial Transistors.
- Fast switching devices exhibiting short turn-off and low saturation voltage characteristics.
- 2N2369/A are NPN Silicon High Speed Saturated Switching, Transistors With Low Power and High Speed Switching Applications.
TO-18 Metal Can Package
Dimensions Minimum Maximum
A 5.24 5.84
B 4.52 4.97
C 4.31 5.33
D 0.40 0.53
- 0.76
- 1.27
- 2.97
H 0.91 1.17
J 0.71 1.21
K 12.70
- L 45°
Dimensions : Millimetres
Pin Configuration 1. Emitter 2. Base 3. Collector
Page 1
31/05/05 V1.0
2N2369, 2369A
High Speed Switching Transistors
Absolute Maximum Ratings
Parameter
Collector Emitter Voltage Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Collector Current Peak (10µs Pulse) Power Dissipation at Ta = 25°C Derate above 25°C
Power Dissipation at Tc = 25°C Tc = 100°C
Derate above 100°C
Operating and Storage Junction Temperature Range
Symbol VCEO VCES VCBO VEBO IC
IC (Peak)...
