Datasheet4U Logo Datasheet4U.com

ST36N10D - 36A N-Channel Enhancement Mode MOSFET

Description

STN36N10D is used trench technology to provide excellent RDS(on) and gate charge.

Those devices are suitable for use as load switch or in PWM applications.

📥 Download Datasheet

Datasheet Details

Part number ST36N10D
Manufacturer STANSON
File Size 629.08 KB
Description 36A N-Channel Enhancement Mode MOSFET
Datasheet download datasheet ST36N10D Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
ST36015 RF power LDMOS transistor STMicroelectronics
ST3610 POWER TRANSFORMERS apx
ST3612 POWER TRANSFORMERS apx
ST36120 POWER TRANSFORMERS apx
ST3616 POWER TRANSFORMERS apx

Other Datasheets by STANSON

Part Number Description
ST36N06 36A N-Channel Enhancement Mode MOSFET

Full PDF Text Transcription

Click to expand full text
ST36N10D N Channel Enhancement Mode MOSFET 36.0A DESCRIPTION STN36N10D is used trench technology to provide excellent RDS(on) and gate charge. Those devices are suitable for use as load switch or in PWM applications. PIN CONFIGURATION TO-252 FEATURE l 100V/20.0A, RDS(ON) = 40mΩ (Typ.) @VGS = 10V l 100V/20.0A, RDS(ON) = 42mΩ @VGS = 4.5V l Super high density cell design for extremely low RDS(ON) l Exceptional on-resistance and maximum DC current capability l TO-252,TO-251 package design PART MARKING Y: Year Code A: Date Code Q: Process Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2009, Stanson Corp. ST36N10D 2009. V1 ST36N10D N Channel Enhancement Mode MOSFET 36.
Published: |