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ST36015 - RF power LDMOS transistor

Description

The ST36015 is a 20 W, 28 V, internally matched LDMOS transistor designed for cellular base stations and ISM applications in the frequency range from 0.7 to 3.6 GHz.

Features

  • Order code Frequency VDD POUT Gain Efficiency ST36015 3450 MHz 28 V 20 W 12.4 dB 42%.
  • High efficiency and linear gain operations.
  • Integrated ESD protection.
  • Internal input matching for ease of use.
  • Large positive and negative gate-source voltage range for improved class C operation.
  • In compliance with the European directive 2002/95/EC.

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Full PDF Text Transcription

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ST36015 Datasheet 20 W, 28 V, 0.7 to 3.6 GHz RF power LDMOS transistor 1 3 2 E2 Pin connection Pin Connection 1 Drain 2 Source (bottom side) 3 Gate Features Order code Frequency VDD POUT Gain Efficiency ST36015 3450 MHz 28 V 20 W 12.4 dB 42% • High efficiency and linear gain operations • Integrated ESD protection • Internal input matching for ease of use • Large positive and negative gate-source voltage range for improved class C operation • In compliance with the European directive 2002/95/EC Applications • Telecom and wideband communication • Industrial, scientific and medical (ISM) Description The ST36015 is a 20 W, 28 V, internally matched LDMOS transistor designed for cellular base stations and ISM applications in the frequency range from 0.7 to 3.6 GHz.
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