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ST36N06 - 36A N-Channel Enhancement Mode MOSFET

Description

ST36N06 is used trench technology to provide excellent RDS(on) and gate charge.

Those devices are suitable for use as load switch or in PWM applications.

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Datasheet Details

Part number ST36N06
Manufacturer STANSON
File Size 497.69 KB
Description 36A N-Channel Enhancement Mode MOSFET
Datasheet download datasheet ST36N06 Datasheet

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Full PDF Text Transcription

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ST36N06 N Channel Enhancement Mode MOSFET 36.0A DESCRIPTION ST36N06 is used trench technology to provide excellent RDS(on) and gate charge. Those devices are suitable for use as load switch or in PWM applications. PIN CONFIGURATION TO220-3L FEATURE 60V/20.0A, RDS(ON) = 30mΩ (Typ.) @VGS = 10V 60V/20.0A, RDS(ON) = 45mΩ @VGS = 4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability TO-220 package design STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2009, Stanson Corp. ST36N06 2009. V1 ST36N06 N Channel Enhancement Mode MOSFET 36.
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