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STW43NM60ND Datasheet Power MOSFETs

Manufacturer: STMicroelectronics

General Description

The FDmesh™ II series belongs to the second generation of MDmesh™ technology.

This revolutionary Power MOSFET associates a new vertical structure to the company's strip layout and associates all advantages of reduced onresistance and fast switching with an intrinsic fastrecovery body diode.It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters.

Table 1.

Overview

STW43NM60ND www.datasheet4u.com N-channel 600 V - 0.075 Ω - 35 A - TO-247 FDmesh™ Power MOSFET (with fast diode) Preliminary.

Key Features

  • Type STW43NM60ND.
  • VDSS @ TJMAX 650 V RDS(on) max < 0.095 Ω ID 35 A The worldwide best RDS(on).
  • area amongst the fast recovery diode devices 2 3 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Extremely high dv/dt and avalanche capabilities. Figure 1. TO-247 1.