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STW40NS15 Datasheet N-CHANNEL MOSFET

Manufacturer: STMicroelectronics

General Description

This powermos MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process.

This technology matches and improves the performances compared with standard parts from various sources.

TO-247 INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s HIGH CURRENT SWITCHING s UNINTERRUPTIBLE POWER SUPPLY (UPS) s PRIMARYSWITCH IN ISOLATED DC-DC CONVERTERS ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (1) Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max.

Overview

www.DataSheet4U.com N-CHANNEL 150V - 0.042Ω - 40A TO-247 MESH OVERLAY™ MOSFET PRELIMINARY DATA TYPE STW40NS15 s s s s STW40NS15 VDSS 150 V RDS(on) <0.052Ω ID 40A TYPICAL RDS(on) = 0.