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STW29NK50ZD - N-Channel MOSFET

General Description

- O te protection and very goog dv/dt capability with a ) le Fast body-drain recovery diode.

Such series comt(s o plements the “FDmesh™” Advanced Technology.

Key Features

  • Figure 1: Package TYPE VDSS RDS(on) ID PW STW29NK50ZD 500 V < 0.13 Ω 29 A 350 W.

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STW29NK50ZD N-CHANNEL 500 V - 0.095Ω - 29A TO-247 Fast Diode SuperMESH™ MOSFET Table 1: General Features Figure 1: Package TYPE VDSS RDS(on) ID PW STW29NK50ZD 500 V < 0.13 Ω 29 A 350 W ■ TYPICAL RDS(on) = 0.095 Ω ) ■ HIGH dv/dt CAPABILITY t(s ■ 100% AVALANCHE TESTED c ■ GATE CHARGE MINIMIZED u ■ LOW INTRINSIC CAPACITANCES d ■ VERY GOOD MANUFACTURING ro ) REPEATIBILITY P t(s ■ FAST INTERNAL RECOVERY TIME 3 2 1 TO-247 soleteroduc DESCRIPTION b P The Fast SuperMesh™ series associates all ad- vantages of reduced on-resistance, zener gate - O te protection and very goog dv/dt capability with a ) le Fast body-drain recovery diode. Such series comt(s o plements the “FDmesh™” Advanced Technology.