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STW29NK50Z - N-CHANNEL SuperMESH MOSFET

General Description

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established Figure 2: Internal Schematic Diagram strip-based PowerMESH™ layout.

Key Features

  • TYPE STW29NK50Z I I I I I I Figure 1: Package ID 31 A PW 350 W VDSS 500 V RDS(on) < 0.13 Ω.

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www.DataSheet4U.com STW29NK50Z N-CHANNEL 500 V - 0.105Ω - 31A TO-247 Zener-Protected SuperMESH™ MOSFET Table 1: General Features TYPE STW29NK50Z I I I I I I Figure 1: Package ID 31 A PW 350 W VDSS 500 V RDS(on) < 0.13 Ω TYPICAL RDS(on) = 0.105 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY TO-247 3 2 1 DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established Figure 2: Internal Schematic Diagram strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dtDataSheet4U.com capability for the most demanding application.