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STW14NK60Z - N-CHANNEL POWER MOSFET

General Description

These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout.

Key Features

  • TAB TAB Order codes VDS RDS(on) max. ID PTOT 123 t(s)I2PAK 3 2 1 TO-220 lete ProducTO-247 bsoFigure 1. Internal schematic diagram - OD(2, TAB) duct(s)G(1) solete ProS(3) Ob AM01476v1 STB14NK60Z-1 STP14NK60Z 600 V 0.5 Ω 13.5 A 160 W STW14NK60Z.
  • Extremely high dv/dt capability.
  • 100% avalanche tested.
  • Gate charge minimized.
  • Very low intrinsic capacitances.
  • Very good manufacturing repeatability.
  • Zener-protected.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STB14NK60Z, STP14NK60Z, STW14NK60Z N-channel 600 V, 0.45 Ω typ., 13.5 A SuperMESH™ 2 Power MOSFETs in I PAK, TO-220 and TO-247 packages Datasheet - obsolete product Features TAB TAB Order codes VDS RDS(on) max. ID PTOT 123 t(s)I2PAK 3 2 1 TO-220 lete ProducTO-247 bsoFigure 1. Internal schematic diagram - OD(2, TAB) duct(s)G(1) solete ProS(3) Ob AM01476v1 STB14NK60Z-1 STP14NK60Z 600 V 0.5 Ω 13.