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STB95NF03 - N-Channel Enhancement Mode MOSFET

Description

This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process.

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w w w s s s s STB95NF03 .D a S a t he et 4U . m o c STB95NF03 N-CHANNEL 30V - 0.0065 Ω - 95A D²PAK STripFET™ II POWER MOSFET RDS(on) <0.007 Ω ID 80 A TYPE VDSS 30 V TYPICAL RDS(on) = 0.0065 Ω STANDARD THRESHOLD DRIVE 100% AVALANCHE TESTED SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX “T4”) DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
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