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N-CHANNEL 600V - 0.6Ω - 9A - D2PAK/I2PAK PowerMesh™ II MOSFET
RDS(on) < 0.75 Ω < 0.75 Ω ID 9.0 A 9.0 A
STB9NC60 STB9NC60-1
TYPE
VDSS 600 V 600 V
STB9NC60 STB9NC60-1
s s s s s
TYPICAL RDS(on) = 0.6 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED
3 1
DESCRIPTION The PowerMESH™ II is the evolution of the first generation of MESH OVERLAY™ . The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.
STB9NC60 Datasheet
