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STB9NK60ZFD - N-Channel Enhancement Mode MOSFET

Description

The Fast SuperMESH™ series associates all advantages of reduced on-resistance, zener gate protection and very goog dv/dt capability with a Fast body-drain recovery diode.

Such series complements the “FDmesh™” Advanced Technology.

Features

  • OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the Zener voltage is appropriate to achieve an efficient and costeffective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 2/9 STP9NK60ZFD.

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Full PDF Text Transcription

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w w w .D e h N-CHANNEL 600V - 0.85Ω - 7A TO-220/TO-220FP/D PAK S a Fast Diode SuperMESH™ MOSFET at 2 VDSS 600 V 600 V 600 V RDS(on) < 0.95 Ω < 0.95 Ω < 0.95 Ω ID 7A 7A 7A Pw 104 W 32 W 104 W et 4U . m o c STP9NK60ZFD - STP9NK60ZFDFP STB9NK60ZFD TARGET DATA TYPE STP9NK60ZFD STP9NK60ZFDFP STB9NK60ZFD s s s s s s s TYPICAL RDS(on) = 0.85 Ω HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY FAST INTERNAL RECOVERY DIODE TO-220 DESCRIPTION The Fast SuperMESH™ series associates all advantages of reduced on-resistance, zener gate protection and very goog dv/dt capability with a Fast body-drain recovery diode. Such series complements the “FDmesh™” Advanced Technology.
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