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STB9NK60ZFP - N-Channel Enhancement Mode MOSFET

Download the STB9NK60ZFP datasheet PDF. This datasheet also covers the STB9NK60Z variant, as both devices belong to the same n-channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout.

In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.

Features

  • OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the Zener voltage is appropriate to achieve an efficient and costeffective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 2/13 STP9NK60Z /.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STB9NK60Z_STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription

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w w w .D e h N-CHANNEL 600V - 0.85Ω - 7A TO-220/FP/D PAK/I PAK S a Zener-Protected SuperMESH™Power MOSFET at 2 2 VDSS 600 600 600 600 V V V V RDS(on) < 0.95 < 0.95 < 0.95 < 0.95 ID 7 7 7 7 A A A A Pw 125 W 30 W 125 W 125 W TO-220 et 4U . m o c STP9NK60Z - STP9NK60ZFP STB9NK60Z - STB9NK60Z-1 TYPE STP9NK60Z STP9NK60ZFP STB9NK60Z STB9NK60Z-1 Ω Ω Ω Ω s s s s s s s TYPICAL RDS(on) = 0.85 Ω EXTREMELY HIGH dv/dt CAPABILITY IMPROVED ESD CAPABILITY 100% AVALANCHE RATED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY I2PAK DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout.
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