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STB90NF03L - N-Channel Enhancement Mode MOSFET

Description

This application specific Power Mosfet is the third generation of STMicroelectronics unique “Single Feature Size ™” strip-based process.

The resulting transistor shows the best trade-off between on-resistance and gate charge.

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w w w .D a t a Sh N-CHANNEL 30V - 0.0056Ω - 90A D2PAK LOW GATE CHARGE STripFET™ POWER MOSFET VDSS 30 V RDS(on) < 0.0065 Ω ID 90 A t e e 4U . m o c STB90NF03L TYPE STB90NF03L s s s s s TYPICAL RDS(on) = 0.0056 Ω TYPICAL Qg = 35 nC @ 5V OPTIMAL RDS(on) x Qg TRADE-OFF CONDUCTION LOSSES REDUCED SWITCHING LOSSES REDUCED 3 DESCRIPTION This application specific Power Mosfet is the third generation of STMicroelectronics unique “Single Feature Size ™” strip-based process. The resulting transistor shows the best trade-off between on-resistance and gate charge. When used as high and low side in buck regulators, it gives the best performance in terms of both conduction and switching losses.
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