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STB60NF03L
N-CHANNEL 30V - 0.008 Ω - 60A D2PAK STripFET™ POWER MOSFET
PRELIMINARY DATA
T YPE STB60NF03L
s s
V DSS 30 V
R DS(on) < 0.01 Ω
ID 60 A
s s
TYPICAL RDS(on) = 0.008 Ω OPTIMIMIZED FOR HIGH SWITCHING OPERATIONS LOW THRESHOLD DRIVE LOGIC LEVEL GATE DRIVE
3 1
DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique ”Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.