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STB60NE03L-12
N - CHANNEL 30V - 0.009 Ω - 60A - D2PAK "SINGLE FEATURE SIZE™ " POWER MOSFET
PRELIMINARY DATA
TYPE STB60NE03L-12
s s s s s s s s
V DSS 30 V
R DS(on) <0.012 Ω
ID 60 A
TYPICAL RDS(on) = 0.009 Ω AVALANCE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION
3 1
D2PAK TO-263
(Suffix "T4")
DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size™ " strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
STB60NE03L-12 Datasheet
