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STB60NE06L-16
N - CHANNEL 60V - 0.014Ω - 60A D2PAK STripFET™ POWER MOSFET
TYPE STB60NE06L-16
s s s s s s s
V DSS 60 V
R DS(on) < 0.16 Ω
ID 60 A
TYPICAL RDS(on) = 0.014 Ω AVALANCHE RUGGED TECHNOLOGY LOW GATE CHARGE HIGH CURRENT CAPABILITY 175 oC OPERATING TEMPERATURE LOW THRESHOLD DRIVE FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE
3 1
DESCRIPTION This Power Mosfet is the latest development of STMicroelectronis unique ”Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.