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2N7000
Small Signal MOSFET
200 mA, 60 V N-Channel
Drain
Gate
Source
1. Source 2.Gate 3.Drain TO-92 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Symbol
Value
Unit
Drain Source Voltage
VDSS
60
V
Drain-Gate Voltage (RGS = 1 MΩ)
VDGR
60
V
Gate-source Voltage
Continuous
VGS
± 20
V
Non-repetitive ( tp ≤ 50 μs)
VGSM
± 40
V
Drain Current
Continuous
ID
200
mA
Pulsed
IDM
500
mA
Total Power Dissipation
PD
350
mW
Junction Temperature
Tj
150
OC
Storage Temperature Range
Tstg
- 55 to + 150
OC
SEMTECH ELECTRONICS LTD.
®
Dated : 16/08/2016 Rev:01
2N7000
Characteristics at Ta = 25 OC Parameter
Symbol
Min.
Max.
2N7000 Datasheet
