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SW5N80 - MOSFET

Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN.

This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.

Features

  • TO-220F.
  • High ruggedness.
  • RDS(ON) (Max 1.8 Ω)@VGS=10V.
  • Gate Charge (Typ 26nC).
  • Improved dv/dt Capability.
  • 100% Avalanche Tested 1 2 3 1. Gate 2. Drain 3. Source General.

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Datasheet Details

Part number SW5N80
Manufacturer SEMIPOWER
File Size 764.52 KB
Description MOSFET
Datasheet download datasheet SW5N80 Datasheet

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Full PDF Text Transcription

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SAMWIN SW5N80 N-channel MOSFET Features TO-220F ■ High ruggedness ■ RDS(ON) (Max 1.8 Ω)@VGS=10V ■ Gate Charge (Typ 26nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested 1 2 3 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply. BVDSS : 800V ID : 5.0A RDS(ON) : 1.
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