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SW50N06A - N-channel MOSFET

Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN.

This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.

Features

  • High ruggedness.
  • RDS(ON) (Max 0.023Ω)@VGS=10V.
  • Gate Charge (Typ 36nC).
  • Improved dv/dt Capability.
  • 100% Avalanche Tested TO-220F TO-220 1 2 1 3 1. Gate 2. Drain 3. Source General.

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Datasheet Details

Part number SW50N06A
Manufacturer SAMWIN
File Size 651.74 KB
Description N-channel MOSFET
Datasheet download datasheet SW50N06A Datasheet

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Full PDF Text Transcription

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SAMWIN SW50N06A N-channel MOSFET BVDSS : 60V ID : 50A RDS(ON) : 0.023ohm 2 2 3 1 3 Features ■ High ruggedness ■ RDS(ON) (Max 0.023Ω)@VGS=10V ■ Gate Charge (Typ 36nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-220F TO-220 1 2 1 3 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. It is mainly suitable for half bridge or full bridge resonant topology like a electronic ballast, and also low power switching mode power appliances.
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