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SW50N10 - MOSFET

Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN.

This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.

Features

  • TO-220.
  • High ruggedness.
  • RDS(ON) (Max17mΩ)@VGS=10V.
  • Gate Charge (Typical 82nC).
  • Improved dv/dt Capability.
  • 100% Avalanche Tested 12 3 1. Gate 2. Drain 3. Source General.

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Datasheet Details

Part number SW50N10
Manufacturer SEMIPOWER
File Size 709.43 KB
Description MOSFET
Datasheet download datasheet SW50N10 Datasheet

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Full PDF Text Transcription

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SAMWIN SW50N10 N-channel TO-220 MOSFET Features TO-220 ■ High ruggedness ■ RDS(ON) (Max17mΩ)@VGS=10V ■ Gate Charge (Typical 82nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested 12 3 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply.
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