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RUH60100R - N-Channel Advanced Power MOSFET

Description

Applications On board power for server Synchronous rectification GDS TO220 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Te

Features

  • 60V/100A, RDS (ON) =3.3mΩ(Typ. )@VGS=10V RDS (ON) =4.3mΩ(Typ. )@VGS=4.5V.
  • Ultra Low On-Resistance.
  • Fast Switching Speed.
  • 100% avalanche tested.
  • Lead Free and Green Devices Available (RoHS Compliant) Pin.

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Datasheet Details

Part number RUH60100R
Manufacturer Ruichips
File Size 435.62 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet RUH60100R Datasheet

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Full PDF Text Transcription

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RUH60100R N-Channel Advanced Power MOSFET Features • 60V/100A, RDS (ON) =3.3mΩ(Typ.)@VGS=10V RDS (ON) =4.3mΩ(Typ.)@VGS=4.
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