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RUH3051M - N-Channel Advanced Power MOSFET

Description

D D DD SSS G PIN1 PDFN5060 D PIN1 G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Lar

Features

  • 30V/50A, RDS (ON) =4.2mΩ(Typ. )@VGS=10V RDS (ON) =6mΩ(Typ. )@VGS=4.5V.
  • Advanced HEFET® Technology.
  • Ultra Low On-Resistance.
  • Excellent QgxRDS(on) Product.
  • 100% avalanche tested.
  • Lead Free and Green Devices Available (RoHS Compliant).

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Datasheet Details

Part number RUH3051M
Manufacturer Ruichips
File Size 331.81 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet RUH3051M Datasheet

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Full PDF Text Transcription

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RUH3051M N-Channel Advanced Power MOSFET Features • 30V/50A, RDS (ON) =4.2mΩ(Typ.)@VGS=10V RDS (ON) =6mΩ(Typ.)@VGS=4.
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