Datasheet4U Logo Datasheet4U.com

RUH30J30M - Dual N-Channel Advanced Power MOSFET

Description

G2S2 S2 S2 G1D1D1D1 PDFN5 6 PIN1 Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Lar

Features

  • 30V/30A, RDS (ON) =6mΩ(Typ. )@VGS=10V RDS (ON) =9.5mΩ(Typ. )@VGS=4.5V.
  • Ultra Low On-Resistance.
  • Fast Switching Speed.
  • 100% avalanche tested.
  • Lead Free and Green Devices Available (RoHS Compliant).

📥 Download Datasheet

Datasheet Details

Part number RUH30J30M
Manufacturer Ruichips
File Size 418.37 KB
Description Dual N-Channel Advanced Power MOSFET
Datasheet download datasheet RUH30J30M Datasheet

📁 Similar Datasheet

Other Datasheets by Ruichips
  • RUH30J51M - Dual Symmetric N-Channel MOSFET
  • RUH30100M - N-Channel Advanced Power MOSFET
  • RUH3051L - N-Channel Advanced Power MOSFET
  • RUH3051M - N-Channel Advanced Power MOSFET
  • RUH3090L - N-Channel Advanced Power MOSFET
  • RUH1H100R - N-Channel Advanced Power MOSFET
  • RUH1H150S - N-Channel Advanced Power MOSFET
  • RUH1H80M - N-Channel Advanced Power MOSFET

Full PDF Text Transcription

Click to expand full text
RUH30J30M Dual N-Channel Advanced Power MOSFET Features • 30V/30A, RDS (ON) =6mΩ(Typ.)@VGS=10V RDS (ON) =9.5mΩ(Typ.)@VGS=4.
Published: |