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RUH1H150S - N-Channel Advanced Power MOSFET

Description

100V/150A, RDS (ON) =3.8mΩ(Typ.)@VGS=10V Advanced HEFET® Technology Ultra Low On-Resistance Excellent QgxRDS(on) Product 100% avalanche tested 175°C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant) D

Features

  • Pin.

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Datasheet Details

Part number RUH1H150S
Manufacturer Ruichips
File Size 1.22 MB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet RUH1H150S Datasheet

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Full PDF Text Transcription

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sales.Mr.wang13826508770 www.sztssd.com RUH1H150S N-Channel Advanced Power MOSFET Features Pin Description • 100V/150A, RDS (ON) =3.8mΩ(Typ.
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