TO-220
Applications
Power Management
Absolute Maximum Ratings
N-Channel MOSFET
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuou
Features
60V/25A, RDS (ON) =35mΩ(Typ. )@VGS=10V.
Super High Dense Cell Design.
ESD protected.
100% avalanche tested.
Lead Free and Green Devices Available (RoHS Compliant)
Pin.
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RU60E25R
N-Channel Advanced Power MOSFET
MOSFET
Features
• 60V/25A, RDS (ON) =35mΩ(Typ.
RU60E25R Datasheet
