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RU60E25K - N-Channel Advanced Power MOSFET

Description

G DS TO251 Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP① 300μs Pu

Features

  • 60V/25A, RDS (ON) =30mΩ(Typ. )@VGS=10V RDS (ON) =40mΩ(Typ. )@VGS=4.5V.
  • ESD protected.
  • Reliable and Rugged.
  • Fast Switching Speed.
  • 100% avalanche tested.
  • Lead Free and Green Devices Available (RoHS Compliant).

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Datasheet Details

Part number RU60E25K
Manufacturer Ruichips
File Size 598.18 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet RU60E25K Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RU60E25K N-Channel Advanced Power MOSFET Features • 60V/25A, RDS (ON) =30mΩ(Typ.)@VGS=10V RDS (ON) =40mΩ(Typ.)@VGS=4.
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