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RU60E16R - N-Channel Advanced Power MOSFET

Description

TO-220 Absolute Maximum Ratings N-Channel MOSFET Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC=25°C Mounted on La

Features

  • 60V/16A, RDS (ON) =60mΩ(Typ. )@VGS=10V RDS (ON) =75mΩ(Typ. )@VGS=4.5V.
  • Super High Dense Cell Design.
  • ESD protected.
  • 100% avalanche tested.
  • Lead Free and Green Devices Available (RoHS Compliant).

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Datasheet Details

Part number RU60E16R
Manufacturer Ruichips
File Size 297.00 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet RU60E16R Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RU60E16R N-Channel Advanced Power MOSFET MOSFET Features • 60V/16A, RDS (ON) =60mΩ(Typ.)@VGS=10V RDS (ON) =75mΩ(Typ.)@VGS=4.
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