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RU3089L - N-Channel Advanced Power MOSFET

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Datasheet Details

Part number RU3089L
Manufacturer Ruichips
File Size 290.64 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet RU3089L Datasheet

General Description

TO-252 N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC=25°C Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C Copyright© Ruichips Semiconductor Co., Ltd Rev.

A– JUL., 2012 Rating 30 ±20 175 -55 to 175 ① 89 ② 356 ① 89 ① 69 96 48 1.55 Unit V °C °C A A A W W °C/W 256 mJ www.ruichips.com RU3089L Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU3089L Unit Min.

Typ.

Overview

RU3089L N-Channel Advanced Power MOSFET MOSFET.

Key Features

  • 30V/89A, RDS (ON) =3.8mΩ (Typ. )@VGS=10V RDS (ON) =5mΩ (Typ. )@VGS=4.5V.
  • Super High Dense Cell Design.
  • Ultra Low On-Resistance.
  • 100% avalanche tested.
  • Lead Free and Green Devices Available (RoHS Compliant).

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