RU3080M - N-Channel Advanced Power MOSFET

Ruichips

Datasheet Details

Part number	RU3080M
Manufacturer	Ruichips
File Size	302.29 KB
Description	N-Channel Advanced Power MOSFET
Datasheet	RU3080M Datasheet

General Description

PDFN5060 Applications • DC/DC Conversion • Switching Application Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation Copyright Ruichips Semiconductor Co., Ltd Rev.

A– APR., 2012 N-Channel MOSFET TC=25°C TC=25°C TC=25°C TC=100°C TA=25°C TA=70°C TC=25°C TC=100°C TA=25°C TA=70°C Rating Unit 30 ±20 150 -55 to 150 50 V °C °C A ② 320 ① 80 ① 64 ③ 26

Overview

RU3080M N-Channel Advanced Power MOSFET.

Key Features

30V/80A, RDS (ON) =2.3mΩ(Typ. )@VGS=10V RDS (ON) =3mΩ(Typ. )@VGS=4.5V.
Super High Dense Cell Design.
Reliable and Rugged.
100% avalanche tested.
Lead Free and Green Devices Available (RoHS Compliant) Pin.

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