RU3080L Datasheet N-Channel Advanced Power MOSFET

Manufacturer: Ruichips

RU3080L n-channel advanced power mosfet by Ruichips - Datasheet Preview

Datasheet Details

Part number	RU3080L
Manufacturer	Ruichips
File Size	325.08 KB
Description	N-Channel Advanced Power MOSFET
Datasheet	RU3080L Datasheet

General Description

TO-252 Applications • DC-DC Converters N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC=25°C Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C Copyright Ruichips Semiconductor Co., Ltd Rev.

B– JAN., 2013 Rating 30 ±20 175 -55 to 175 ① 90 ② 360 ① 90 �

Key Features

30V/90A, RDS (ON) =2.6mΩ(Typ. )@VGS=10V.
Super High Dense Cell Design.
Ultra Low On-Resistance.
100% avalanche tested.
Lead Free and Green Devices Available (RoHS Compliant) Pin.

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