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RFN10TF6S - Super Fast Recovery Diode

Features

  • 1)Low switching loss 2)High current overload capacity RFN10 TF6S ձ ղ zConstruction Silicon epitaxial planer type ᖺ᭶ ROHM : TO220NFM ձ ղ Manufacture Year Manufacture Week zAbsolue Maximum Ratings(Tc=25°C) Parameter Repetitive peak reverse voltage Reverse voltage Average rectified foward current Forward current surge peak Junction temperature Storage temperature zElectrical Characteristics(Tj=25°C) Parameter Forward voltage Reverse current Reverse recovery time Thermal.

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Datasheet Details

Part number RFN10TF6S
Manufacturer ROHM
File Size 304.67 KB
Description Super Fast Recovery Diode
Datasheet download datasheet RFN10TF6S Datasheet
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Full PDF Text Transcription

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RFN10TF6S Data Sheet Super Fast Recovery Diode RFN10TF6S zSerise Standard Fast Recovery zDimensions(Unit : mm) zStructure zApplications General rectification zFeatures 1)Low switching loss 2)High current overload capacity RFN10 TF6S ձ ղ zConstruction Silicon epitaxial planer type ᖺ᭶ ROHM : TO220NFM ձ ղ Manufacture Year Manufacture Week zAbsolue Maximum Ratings(Tc=25°C) Parameter Repetitive peak reverse voltage Reverse voltage Average rectified foward current Forward current surge peak Junction temperature Storage temperature zElectrical Characteristics(Tj=25°C) Parameter Forward voltage Reverse current Reverse recovery time Thermal resistance Symbol VF IR trr Rth(j-c) Conditions IF=10A VR=600V IF=0.5A,IR=1A,Irr=0.25×IR Junction to case Min. Typ. 1.25 0.
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