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RFN10T2D - Super Fast Recovery Diode

Features

  • 1)Cathode common Dual type. (TO-220) 2)Low VF 3)Low switching loss.
  • Construction Silicon epitaxial planer.
  • Dimensions (Unit : mm) 10.0±0.3 　　　 0.1 4.5±0.3 　　　 0.1 2.8±0.2 　　　 0.1 15.0±0.4 　 0.2 8.0 8.0±0.2 12.0±0.2 RFN10 T2D ① 1.2 ① 5.0±0.2 14.0±0.5 13.5MIN 1.3 0.8 (1) (2) (3) 0.7±0.1 0.05 ROHM : TO220FN ① dot (year week factory) 2.6±0.5.
  • Structure.
  • Absolute maximum ratings (Tc=25C) Parameter Symbol Repetitive peak reverse voltage Reverse voltage VRM VR Averag.

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Datasheet Details

Part number RFN10T2D
Manufacturer ROHM
File Size 428.98 KB
Description Super Fast Recovery Diode
Datasheet download datasheet RFN10T2D Datasheet
Additional preview pages of the RFN10T2D datasheet.

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Full PDF Text Transcription

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Data Sheet Super Fast Recovery Diode RFN10T2D Applications General rectification Features 1)Cathode common Dual type. (TO-220) 2)Low VF 3)Low switching loss Construction Silicon epitaxial planer Dimensions (Unit : mm) 10.0±0.3 　　　 0.1 4.5±0.3 　　　 0.1 2.8±0.2 　　　 0.1 15.0±0.4 　 0.2 8.0 8.0±0.2 12.0±0.2 RFN10 T2D ① 1.2 ① 5.0±0.2 14.0±0.5 13.5MIN 1.3 0.8 (1) (2) (3) 0.7±0.1 0.05 ROHM : TO220FN ① dot (year week factory) 2.6±0.5 Structure Absolute maximum ratings (Tc=25C) Parameter Symbol Repetitive peak reverse voltage Reverse voltage VRM VR Average rectified forward current Io Forward current surge peak Junction temperature Storage temperature IFSM Tj Tstg Conditions Duty≤0.
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