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RFN10BM3SFH - Super Fast Recovery Diode

Features

  • 1) Low switching loss 2) High current overload capacity ROHM : TO-252 JEITA : SC-63 1 : Manufacture Date.
  • Construction Silicon epitaxial planar type.
  • Taping Dimensions (Unit : mm) 1.6 1.6 TO-252 2.3 2.3.
  • Structure Cathode Anode Anode.
  • Absolute Maximum Ratings (Tc= 25°C) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage VRM Duty≦0.5 350 V Reverse voltage VR Direct voltage 350 V Average rectified foward current Io 60Hz half sin wave.

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Datasheet preview – RFN10BM3SFH

Datasheet Details

Part number RFN10BM3SFH
Manufacturer ROHM
File Size 1.22 MB
Description Super Fast Recovery Diode
Datasheet download datasheet RFN10BM3SFH Datasheet
Additional preview pages of the RFN10BM3SFH datasheet.

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Full PDF Text Transcription

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Super Fast Recovery Diode RFN10BM3SFH Datasheet Series Standard Fast Recovery Dimensions (Unit : mm) AEC-Q101 Qualified Land Size Figure (Unit : mm) 6.0 3.0 2.0 6.0 Application General rectification 1 Features 1) Low switching loss 2) High current overload capacity ROHM : TO-252 JEITA : SC-63 1 : Manufacture Date Construction Silicon epitaxial planar type Taping Dimensions (Unit : mm) 1.6 1.6 TO-252 2.3 2.3 Structure Cathode Anode Anode Absolute Maximum Ratings (Tc= 25°C) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage VRM Duty≦0.
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