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RB731U
Diodes
Schottky barrier diode
RB731U
!Applications High speed switching. !External dimensions (Units : mm)
2.9±0.2 1.9±0.2
1.1
+0.2 −0.1
1.6
+0.1 0.3 − 0.05
+0.1 0.15 − 0.06
!Construction Silicon epitaxial planar
ROHM : SMD6 EIAJ : SC-74 JEDEC : SOT-457
!Circuit
!Absolute maximum ratings (Ta=25°C)
Parameter
Peak reverse voltage DC reverse voltage Mean rectifying current Peak forward surge current∗ Junction temperature Storage temperature
∗ 60 Hz for 1
Symbol VRM VR IO IFSM Tj Tstg
Limits 40 40 30 200 125 −40∼+125
Unit V V mA mA ˚C ˚C
!Electrical characteristics (Ta=25°C)
Parameter Forward voltage Reverse current Capacitance between terminals
Note) ESD sensitive product handling required.
Symbol VF IR CT
Min. − − −
Typ. − − 2.0
Max. 0.