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RB168L-60 - Schottky Barrier Diode

Features

  • 1) Small power mold type (PMDS) 2) High reliability 3) Super low IR lConstruction Silicon epitaxial planar type 12 0.1±0.02 1.5±0.2 2.0±0.2 ROHM : PMDS JEDEC : SOD-106 1 2 : Manufacture Date lTaping Dimensions (Unit : mm) 2.0±0.05 4.0±0.1 PMDS lStructure φf11..555±00..0055 Cathode Anode 0.3 5.3±0.1 　 0.05 9.5±0.1 5.5±0.05 1.75±0.1 12±0.2 2.9±0.1 4.0±0.1 φf11..555 2.8MAX lAbsolute Maximum Ratings (Tc= 25°C) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage.

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Datasheet Details

Part number RB168L-60
Manufacturer ROHM
File Size 509.11 KB
Description Schottky Barrier Diode
Datasheet download datasheet RB168L-60 Datasheet
Additional preview pages of the RB168L-60 datasheet.

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Full PDF Text Transcription

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Schottky Barrier Diode RB168L-60 lApplication General rectification lDimensions (Unit : mm) 2.6±0.15 Data Sheet lLand Size Figure (Unit : mm) 2.0 4.5±0.2 1.2±0.3 5.0±0.3 2.0 4.2 lFeatures 1) Small power mold type (PMDS) 2) High reliability 3) Super low IR lConstruction Silicon epitaxial planar type 12 0.1±0.02 1.5±0.2 2.0±0.2 ROHM : PMDS JEDEC : SOD-106 1 2 : Manufacture Date lTaping Dimensions (Unit : mm) 2.0±0.05 4.0±0.1 PMDS lStructure φf11..555±00..0055 Cathode Anode 0.3 5.3±0.1 　 0.05 9.5±0.1 5.5±0.05 1.75±0.1 12±0.2 2.9±0.1 4.0±0.1 φf11..555 2.8MAX lAbsolute Maximum Ratings (Tc= 25°C) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage VRM Duty≦0.
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