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RB168L100 - Schottky Barrier Diode

Features

  • Small power mold type (PMDS) 2) High reliability 3) Super low IR.
  • Construction Silicon epitaxial planar type 12 0.1±0.02 1.5±0.2 2.0±0.2 ROHM : PMDS JEDEC : SOD-106 1 2 : Manufacture Date.
  • Taping Dimensions (Unit : mm) 2.0±0.05 4.0±0.1 PMDS.
  • Structure φ11..5555±00..0055 Cathode Anode 0.3 5.3±0.1   0.05 9.5±0.1 5.5±0.05 1.75±0.1 12±0.2 2.9±0.1 4.0±0.1 φ11..5555 2.8MAX.
  • Absolute Maximum Ratings (Tc= 25°C) Parameter Symbol Conditions Limits Unit Repetitive peak.

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Datasheet Details

Part number RB168L100
Manufacturer ROHM
File Size 893.53 KB
Description Schottky Barrier Diode
Datasheet download datasheet RB168L100 Datasheet
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Full PDF Text Transcription

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Schottky Barrier Diode RB168L100 Application General rectification Dimensions (Unit : mm) 2.6±0.15 Datasheet Land Size Figure (Unit : mm) 2.0 4.5±0.2 1.2±0.3 5.0±0.3 2.0 4.2 Features 1) Small power mold type (PMDS) 2) High reliability 3) Super low IR Construction Silicon epitaxial planar type 12 0.1±0.02 1.5±0.2 2.0±0.2 ROHM : PMDS JEDEC : SOD-106 1 2 : Manufacture Date Taping Dimensions (Unit : mm) 2.0±0.05 4.0±0.1 PMDS Structure φ11..5555±00..0055 Cathode Anode 0.3 5.3±0.1   0.05 9.5±0.1 5.5±0.05 1.75±0.1 12±0.2 2.9±0.1 4.0±0.1 φ11..5555 2.8MAX Absolute Maximum Ratings (Tc= 25°C) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage VRM Duty≦0.
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