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RB161L-40 - SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE

Datasheet Summary

Features

  • Compact power mold type.
  • Ultra low VF.
  • VRM = 40 V guaranteed Maximum Ratings and Electrical Characteristics Ratings at 25OC ambient temperature unless otherwise specified. Single phase, half wave, resistive or inductive load, For capacitive load, derate by 20% Parameter www. DataSheet. co. kr Symbol VRM VR Value 40 20 1 70 0.4 1 125 - 40 to + 125 Unit V V A A V mA O Peak Reverse Voltage DC Blocking Voltage Mean Rectifying Current 1) IO IFSM VF IR TJ TS Peak Forwa.

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Datasheet Details

Part number RB161L-40
Manufacturer SEMTECH
File Size 219.59 KB
Description SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
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    RB161L-40 SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE FOR HIGH FREQUENCY RECTIFICATION AND SWITCHING POWER SUPPLY Features • Compact power mold type • Ultra low VF • VRM = 40 V guaranteed Maximum Ratings and Electrical Characteristics Ratings at 25OC ambient temperature unless otherwise specified. Single phase, half wave, resistive or inductive load, For capacitive load, derate by 20% Parameter www.DataSheet.co.kr Symbol VRM VR Value 40 20 1 70 0.
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