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RB161QS-40 - Schottky Barrier Diode

Features

  • 1) Small Silicon package (SMD1006) 2) Halogen free 3) Low VF.
  • Construction Silicon epitaxial planar type SMD1006.
  • Structure Cathode ROHM : SMD1006.
  • Taping Dimensions (Unit : mm) Anode.
  • Absolute Maximum Ratings (Tc=25℃) Parameter Symbol Repetitive Peak Reverse Voltage VRM Reverse Voltage VR Average forward rectified current IO Repetitive Peak Forward Current IFRM Non-repetitive Forward Current Surge Peak IFSM Operating Junction Temperature Tj Storage Temperature.

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Datasheet preview – RB161QS-40

Datasheet Details

Part number RB161QS-40
Manufacturer ROHM
File Size 710.82 KB
Description Schottky Barrier Diode
Datasheet download datasheet RB161QS-40 Datasheet
Additional preview pages of the RB161QS-40 datasheet.

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Full PDF Text Transcription

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Schottky Barrier Diode RB161QS-40 ●Applications General rectification ●Dimensions (Unit : mm) Datasheet ●Land Size Figure (Unit : mm) 0.6 0.35 0.65 ●Features 1) Small Silicon package (SMD1006) 2) Halogen free 3) Low VF ●Construction Silicon epitaxial planar type SMD1006 ●Structure Cathode ROHM : SMD1006 ●Taping Dimensions (Unit : mm) Anode ●Absolute Maximum Ratings (Tc=25℃) Parameter Symbol Repetitive Peak Reverse Voltage VRM Reverse Voltage VR Average forward rectified current IO Repetitive Peak Forward Current IFRM Non-repetitive Forward Current Surge Peak IFSM Operating Junction Temperature Tj Storage Temperature Tstg Conditions Duty≦0.5 Direct Reverse Voltage Glass epoxy board mounted, 60Hz half sin wave, resistive load, Tc=90ºC Max. t≦1ms Duty≦0.
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