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RB162L-60 - Schottky Barrier Diode

Datasheet Summary

Features

  • 1) Small power mold type. (PMDS) 2) High switching speed 3) Low forward voltage.
  • Construction Silicon epitaxial planer PMDS.
  • Structure.
  • Taping dimensions (Unit : mm).
  • Absolute maximum ratings (Tl=25 C) Parameter Symbol Repetitive peak reverse voltage VRM Reverse voltage Average rectified forward current Forward current surge peak Junction temperature Storage temperature VR Io IFSM Tj Tstg Conditions D0.5 Direct voltage Glass epoxy substrate mounted R-road, 60Hz half sin w.

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Datasheet preview – RB162L-60

Datasheet Details

Part number RB162L-60
Manufacturer ROHM
File Size 438.88 KB
Description Schottky Barrier Diode
Datasheet download datasheet RB162L-60 Datasheet
Additional preview pages of the RB162L-60 datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com Schottky Barrier Diode RB162L-60 Applications General rectification Dimensions (Unit : mm) Land size figure (Unit : mm) 2.0 2.0 Features 1) Small power mold type. (PMDS) 2) High switching speed 3) Low forward voltage Construction Silicon epitaxial planer PMDS Structure Taping dimensions (Unit : mm) Absolute maximum ratings (Tl=25 C) Parameter Symbol Repetitive peak reverse voltage VRM Reverse voltage Average rectified forward current Forward current surge peak Junction temperature Storage temperature VR Io IFSM Tj Tstg Conditions D0.5 Direct voltage Glass epoxy substrate mounted R-road, 60Hz half sin wave 60Hz half sin wave, Non-repetitive one cycle peak value, Tj=25 C Limits 60 60 1.0 20 150 -40 to +150 4.
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