Datasheet4U Logo Datasheet4U.com

RB162M-40 - Schottky Barrier Diode

Datasheet Summary

Features

  • 1)Small power mold type. (PMDU) 2)Low IR 3)High reliability.
  • Construction Silicon epitaxial planer 3.5±0.12r 0.85 3.05 Data Sheet .
  • Land size figure(Unit : mm) 1.2 PMDU.
  • Structure.
  • Taping specifications(Unit : mm) 4.0±0.1 2.0±0.05 φ1.55±0.05 0.25±0.05 1.75±0.1nnsded fo 8.0±0.2 33..7711±±0.0.018 1.81±0.1 4.0±0.1 φ1.0±0.1 1.5MAX.
  • Absolute maximum ratings (Ta=25C) Parameter Symbol Reverse voltage (repetitive) Reverse voltage (DC) Average rectified forward current.

📥 Download Datasheet

Datasheet preview – RB162M-40

Datasheet Details

Part number RB162M-40
Manufacturer ROHM
File Size 498.28 KB
Description Schottky Barrier Diode
Datasheet download datasheet RB162M-40 Datasheet
Additional preview pages of the RB162M-40 datasheet.

📁 Similar Datasheet

  • RB160M-30 - Schottky Barrier Diode (Kexin)
  • RB160M-40 - SCHOTTKY BARRIER DIODE (JCET)
  • RB160M-60 - SCHOTTKY BARRIER DIODE (JCET)
  • RB160M-60 - SCHOTTKY BARRIER DIODE (UTC)
  • RB161L-40 - SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE (SEMTECH)
  • RB1-125BAG1A - 10/100Base-T Through Hole (UDE)
  • RB100A - SCHOTTKY BARRIER RECTIFIER DIODES (EIC)
  • RB140BN3 - Surface Mount Schottky Barrier Diodes (CYStech Electronics)
  • RB150 - SINGLE-PHASE BRIDGE RECTIFIER (Sunmate)
  • RB150 - 1.5A RB SERIES SIP BRIDGE RECTIFIERS (LRC)
Other Datasheets by Rohm

Full PDF Text Transcription

Click to expand full text
3.5±0.05NotNeRewcDoemsimge Schottky barrier diode RB162M-40 Applications General rectification Dimensions(Unit : mm) Features 1)Small power mold type.(PMDU) 2)Low IR 3)High reliability Construction Silicon epitaxial planer 3.5±0.12r 0.85 3.05 Data Sheet Land size figure(Unit : mm) 1.2 PMDU Structure Taping specifications(Unit : mm) 4.0±0.1 2.0±0.05 φ1.55±0.05 0.25±0.05 1.75±0.1nnsded fo 8.0±0.2 33..7711±±0.0.018 1.81±0.1 4.0±0.1 φ1.0±0.1 1.5MAX Absolute maximum ratings (Ta=25C) Parameter Symbol Reverse voltage (repetitive) Reverse voltage (DC) Average rectified forward current (*1) VRM VR Io Forward current surge peak (60Hz / 1cyc) Junction temperature Storage temperature IFSM Tj Tstg (*1)Mounted on epoxy board.
Published: |