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TP65H100G4LSGB - 650V SuperGaN GaN FET

General Description

The TP65H100G4LSGB 650V, 92mΩ Gallium Nitride (GaN) FET is a normally-off device using Renesas’s Gen IV platform.

It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance.

Key Features

  • Gen IV technology.
  • JEDEC-qualified GaN technology.
  • Dynamic RDS(on)eff production tested.
  • Robust design, defined by.
  • Wide gate safety margin.
  • Transient over-voltage capability.
  • Very low QRR.
  • Reduced crossover loss.
  • RoHS compliant and Halogen-free packaging.
  • Pin-to-pin drop in with e-mode (higher Vt) Benefits.
  • Achieves increased efficiency in both hard- and soft-switched circuits.
  • Increased power density.
  • Reduced sys.

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Other Datasheets by Renesas

Part Number Description
TP65H100G4PS 650V SuperGaN GaN FET
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TP65H150G4LSG 650V GaN FET
TP65H150G4LSGB 650V GaN FET
TP65H150G4PS 650V GaN FET
TP65H030G4PQS 650V GaN FET
TP65H030G4PRS 650V GaN FET
TP65H030G4PWS 650V GaN FET
TP65H035G4QS 650V SuperGaN FET
TP65H035G4WS 650V FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Specifications in this document are tentative and subject to change Datasheet TP65H100G4LSGB 650V SuperGaN® GaN FET in PQFN (source tab) Description The TP65H100G4LSGB 650V, 92mΩ Gallium Nitride (GaN) FET is a normally-off device using Renesas’s Gen IV platform. It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance. The Gen IV SuperGaN® platform uses advanced epi and patented design technologies to simplify manufacturability while improving efficiency over silicon via lower gate charge, output capacitance, crossover loss, and reverse recovery charge.