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RQK2501YGDQA - Silicon N-Channel MOS FET

Description

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Features

  • High drain to source voltage and Low gate drive VDSS : 250 V and 2.5 V gate drive.
  • Low drive current.
  • High speed switching.
  • Small traditional package (MPAK) Outline.

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Full PDF Text Transcription

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RQK2501YGDQA Silicon N Channel MOS FET Power Switching Features • High drain to source voltage and Low gate drive VDSS : 250 V and 2.5 V gate drive • Low drive current • High speed switching • Small traditional package (MPAK) Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 1 2 Preliminary Datasheet R07DS0312EJ0400 Rev.4.00 Jan 10, 2014 3 D 2 G S 1 1. Source 2. Gate 3. Drain Absolute Maximum Ratings Item Symbol Drain to source voltage VDSS Gate to source voltage VGSS Drain current Drain peak current ID ID(pulse) Note1 Body - drain diode reverse drain current Channel dissipation IDR Pch Note2 Channel temperature Tch Storage temperature Tstg Notes: 1. PW ≤ 10 μs, Duty cycle ≤ 1% 2. When using the glass epoxy board (FR-4 40 × 40 × 1 mm) Ratings 250 ±10 0.
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