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RQK0604IGDQA - Silicon N-Channel MOSFET

Features

  • Low on-resistance RDS(on) = 111 mΩ typ. (at VGS = 4.5 V, ID = 1 A).
  • Low drive current.
  • High speed switching.
  • VDSS ≥ 60 V and capable of 2.5 V gate drive Outline.

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Full PDF Text Transcription

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RQK0604IGDQA Silicon N Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 111 mΩ typ.(at VGS = 4.5 V, ID = 1 A) • Low drive current • High speed switching • VDSS ≥ 60 V and capable of 2.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 1 2 Note: Marking is “IG“. Preliminary Datasheet R07DS0308EJ0300 Rev.3.00 Jan 10, 2014 3 D 2 G S 1 1. Source 2. Gate 3. Drain Absolute Maximum Ratings Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Body - drain diode reverse drain current Channel dissipation VDSS VGSS ID ID(pulse) Note1 IDR Pch Note2 Channel temperature Tch Storage temperature Tstg Notes: 1. PW ≤ 10 μs, Duty cycle ≤ 1% 2.
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