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RQK0605JGDQA - N-Channel MOSFET

Description

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Features

  • Low on-resistance RDS(on) = 82 m typ (VGS = 10 V, ID = 1.5 A).
  • Low drive current.
  • High speed switching.
  • 4.5 V gate drive Outline.

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📁 Similar Datasheet

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RQK0604IGDQA Silicon N-Channel MOSFET Renesas Technology
RQK0606KGDQA Silicon N Channel MOS FET Power Switching Renesas Technology

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Full PDF Text Transcription

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RQK0605JGDQA Silicon N Channel MOS FET Power Switching Features  Low on-resistance RDS(on) = 82 m typ (VGS = 10 V, ID = 1.5 A)  Low drive current  High speed switching  4.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 1 2 Note: Marking is “JG”. Preliminary Datasheet R07DS0309EJ0500 (Previous: REJ03G1278-0400) Rev.5.00 Mar 28, 2011 3 D G 1. Source 2 2. Gate 3. Drain S 1 Absolute Maximum Ratings Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Body - drain diode reverse drain current Channel dissipation VDSS VGSS ID ID(Pulse) Note1 IDR Pch Note2 Channel temperature Tch Storage temperature Tstg Notes: 1. PW  10 s, duty cycle  1% 2.
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